Hideaki Arima

A novel source-to-drain nonuniformly doped channel (NUDC) MOSFET for high current drivability and threshold voltage controllability

Y. Okumura, Masayoshi Shirahata, T. Okudaira et al. · 2002 · 33 citations

Low-power Electronics, Conventional Channel Mosfet, Electrical Engineering +11

A 5 volt only 16M bit flash EEPROM cell with a simple stacked gate structure

N. Ajika, M. Ohi, Hideaki Arima et al. · 2002 · 30 citations

Non-volatile Memory, Electrical Engineering, Conventional 0.6 +10

Source-to-drain nonuniformly doped channel (NUDC) MOSFET structures for high current drivability and threshold voltage controllability

Y. Okumura, Masayoshi Shirahata, A. Hachisuka et al. · IEEE Transactions on Electron Devices · 1992 · 27 citations

Low-power Electronics, Conventional Channel Mosfet, Electrical Engineering +9

Plasma Anodic Nitridation of Silicon in  N 2 ‐  H 2 System

Makoto Hirayama, Takashi Matsukawa, Hideaki Arima et al. · Journal of The Electrochemical Society · 1984 · 26 citations

‐ H 2, Engineering, Optoelectronic Devices +16

A 45-ns 64-Mb DRAM with a merged match-line test architecture

S. Mori, Hiroshi Miyamoto, Y. Morooka et al. · IEEE Journal of Solid-State Circuits · 1991 · 24 citations

Engineering, Vlsi Design, Mem Testing +16