Makoto Hirayama

CVD‐BN for Boron Diffusion in Si and Its Application to Si Devices

Makoto Hirayama, Katsufusa Shohno · Journal of The Electrochemical Society · 1975 · 63 citations · Full text

Engineering, Optoelectronic Devices, Semiconductor Device +18

Effect of long-term stress on IGFET degradations due to hot electron trapping

H. Matsumoto, Kokichi Sawada, S. Asai et al. · IEEE Transactions on Electron Devices · 1981 · 57 citations

Engineering, Transistor Dimensions, Semiconductor Device +16

Model for the substrate hole current based on thermionic hole emission from the anode during Fowler–Nordheim electron tunneling in <i>n</i>-channel metal-oxide-semiconductor field-effect transistors

K. Kobayashi, Akinobu Teramoto, Makoto Hirayama et al. · Journal of Applied Physics · 1995 · 56 citations

Device Modeling, Semiconductors, Electrical Engineering +15

Local‐Oxidation‐Induced Stress Measured by Raman Microprobe Spectroscopy

K. Kobayashi, Y. Inoue, T. Nishimura et al. · Journal of The Electrochemical Society · 1990 · 52 citations

Materials Science, Spectroscopy, Surface-enhanced Raman Scattering +2

Etching yields of SiO2 by low energy CF<i>x</i>+ and F+ ions

Teruo Shibano, Nobuo Fujiwara, Makoto Hirayama et al. · Applied Physics Letters · 1993 · 46 citations

Materials Science, Materials Engineering, Chemical Engineering +15