Masayoshi Shirahata

A mobility model including the screening effect in MOS inversion layer

Masayoshi Shirahata, H. Kusano, N. Kotani et al. · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 1992 · 40 citations

Device Modeling, Semiconductors, Electrical Engineering +12

A novel source-to-drain nonuniformly doped channel (NUDC) MOSFET for high current drivability and threshold voltage controllability

Y. Okumura, Masayoshi Shirahata, T. Okudaira et al. · 2002 · 33 citations

Low-power Electronics, Conventional Channel Mosfet, Electrical Engineering +11

Three-dimensional topography simulation model: etching and lithography

M. Fujinaga, N. Kotani, T. Kunikiyo et al. · IEEE Transactions on Electron Devices · 1990 · 30 citations

Engineering, Electron-beam Lithography, Microscopy +17

Source-to-drain nonuniformly doped channel (NUDC) MOSFET structures for high current drivability and threshold voltage controllability

Y. Okumura, Masayoshi Shirahata, A. Hachisuka et al. · IEEE Transactions on Electron Devices · 1992 · 27 citations

Low-power Electronics, Conventional Channel Mosfet, Electrical Engineering +9

A Self-Consistent Monte Carlo Simulation for Two-Dimensional Electron Transport in MOS Inversion Layer

Masayoshi Shirahata, Kenji Taniguchi, Chihiro Hamaguchi · Japanese Journal of Applied Physics · 1987 · 22 citations

Hot Electron Transport, Two-dimensional Electron Transport, Engineering +21