A Monte Carlo simulation of anisotropic electron transport in silicon including full band structure and anisotropic impact-ionization model

T. Kunikiyo, M. Takenaka, Yoshinari Kamakura, +5

Journal of Applied Physics

EngineeringMonte Carlo SimulatorPhonon Dispersion CurveSilicon On InsulatorCharge Transport +16

Impact ionization model for full band Monte Carlo simulation

Yoshinari Kamakura, Hiroyuki Mizuno, M. Yamaji, +5

Journal of Applied Physics

EngineeringEnergy Band StructureImpact Ionization RateSilicon On InsulatorSemiconductor Device +15

A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon

A. Abramo, L. Baudry, R. Brunetti, +44

IEEE Transactions on Electron Devices

EngineeringCharge TransportElectron PhysicNanoelectronicsPlasma Simulation +19

A model of impact ionization due to the primary hole in silicon for a full band Monte Carlo simulation

T. Kunikiyo, Masahiro Takenaka, Masato Morifuji, +2

Journal of Applied Physics

EngineeringSilicon On InsulatorSemiconductor DeviceSemiconductorsIon Implantation +16

Three-dimensional topography simulation model: etching and lithography

M. Fujinaga, N. Kotani, T. Kunikiyo, +3

IEEE Transactions on Electron Devices

EngineeringElectron-beam LithographyMicroscopy3D ModelingComputer-aided Design +15

Reverse short-channel effect due to lateral diffusion of point-defect induced by source/drain ion implantation

T. Kunikiyo, K. Mitsui, M. Fujinaga, +2

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Device ModelingElectrical EngineeringIon ImplantationEngineeringSource/drain Ion Implantation +13

Effect of >100< channel direction for high performance SCE immune pMOSFET with less than 0.15 μm gate length

H. Sayama, Y. Nishida, H. Oda, +6

Low-power ElectronicsElectrical EngineeringCurrent DrivabilityEngineeringHigh Performance Sce +9

Impact of 0.10 μm SOI CMOS with body-tied hybrid trench isolation structure to break through the scaling crisis of silicon technology

Y. Hirano, Takuji Matsumoto, Satoshi Maeda, +8

Electrical EngineeringEngineeringVlsi DesignSilicon TechnologyVlsi Architecture +11

Monte Carlo study of impact ionization phenomena in small geometry MOSFET's

Kenji Taniguchi, M. Yamaji, K. Sonoda, +2

EngineeringMonte Carlo SimulatorSemiconductor DeviceNanoelectronicsNumerical Simulation +18

Test structure measuring inter- and intralayer coupling capacitance of interconnection with subfemtofarad resolution

T. Kunikiyo, T. Watanabe, Toshiki Kanamoto, +8

IEEE Transactions on Electron Devices

Subfemtofarad ResolutionEngineeringTest StructureInterconnect (Integrated Circuits)New Test Structure +15