T. Kunikiyo

A Monte Carlo simulation of anisotropic electron transport in silicon including full band structure and anisotropic impact-ionization model

T. Kunikiyo, M. Takenaka, Yoshinari Kamakura et al. · Journal of Applied Physics · 1994 · 158 citations

Engineering, Monte Carlo Simulator, Phonon Dispersion Curve +18

Impact ionization model for full band Monte Carlo simulation

Yoshinari Kamakura, Hiroyuki Mizuno, M. Yamaji et al. · Journal of Applied Physics · 1994 · 105 citations

Engineering, Energy Band Structure, Impact Ionization Rate +17

A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon

A. Abramo, L. Baudry, R. Brunetti et al. · IEEE Transactions on Electron Devices · 1994 · 69 citations

Engineering, Charge Transport, Electron Physic +21

A model of impact ionization due to the primary hole in silicon for a full band Monte Carlo simulation

T. Kunikiyo, Masahiro Takenaka, Masato Morifuji et al. · Journal of Applied Physics · 1996 · 60 citations

Engineering, Silicon On Insulator, Semiconductor Device +18

Three-dimensional topography simulation model: etching and lithography

M. Fujinaga, N. Kotani, T. Kunikiyo et al. · IEEE Transactions on Electron Devices · 1990 · 30 citations

Engineering, Electron-beam Lithography, Microscopy +17