T. Okudaira

A novel source-to-drain nonuniformly doped channel (NUDC) MOSFET for high current drivability and threshold voltage controllability

Y. Okumura, Masayoshi Shirahata, T. Okudaira et al. · 2002 · 33 citations

Low-power Electronics, Conventional Channel Mosfet, Electrical Engineering +11

Source-to-drain nonuniformly doped channel (NUDC) MOSFET structures for high current drivability and threshold voltage controllability

Y. Okumura, Masayoshi Shirahata, A. Hachisuka et al. · IEEE Transactions on Electron Devices · 1992 · 27 citations

Low-power Electronics, Conventional Channel Mosfet, Electrical Engineering +9

Suppression of Anomalous Gate Edge Leakage Current by Control of Ni Silicidation Region using Si Ion Implantation Technique

Tadashi Yamaguchi, Keiichiro Kashihara, T. Okudaira et al. · 2006 · 14 citations

Electrical Engineering, Ion Implantation, Engineering +12

Improvement of thermal stability of nickel silicide using N<inf>2</inf>ion implantation prior to nickel film deposition

Keiichiro Kashihara, Tadashi Yamaguchi, T. Okudaira et al. · 2006 · 12 citations

Materials Science, Materials Engineering, Ion Implantation +13

Anomalous Nickel Silicide Encroachment in n-Channel Metal–Oxide–Semiconductor Field-Effect Transitors on Si(110) Substrates and Its Suppression by Si⁺ Ion-Implantation Technique

Tadashi Yamaguchi, Keiichiro Kashihara, Shuichi Kudo et al. · Japanese Journal of Applied Physics · 2009 · 10 citations