A novel SCR macromodel for ESD circuit simulation

Abstract

Modeling the circuit behavior of electrostatic discharge (ESD) protection devices under typical ESD stress transients is critical to understanding ESD protection circuit behavior. We present a novel macromodel which greatly reduces the time and effort required to develop circuit simulation models of SCR (silicon controlled rectifier) structures. Simulation results using the SCR macromodel to model LVTSCR behavior under both HBM and CDM stress are presented.