IEEE Transactions on Nuclear Science · 2016 · 11 citations · 20 references
EngineeringComputer EngineeringElectrical EngineeringFault-tolerant ComputingMicroelectronicsSemiconductor DevicesBuilt-in Self-testDevice ReliabilityEmbedded Memory BlocksMemory Subsystem DesignTiming AnalysisDiceDie ArchitectureRobustnessSingle Event Upset ModelingStatic Random-access Memory Design
We propose a new semi-empirical method for estimation of Single Event Upset (SEU) cross section for SRAM Dual Interlocked Cells (DICE) with known distance between neighboring sensitive volumes. The method is based on experimental analysis of SEU maps in sub-100 nm 6T SRAM along with layout considerations and SPICE simulations. This method could help designers to estimate the SEE robustness of DICE cells at the design stage.
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