Analytical modeling of subthreshold swing in undoped trigate SOI MOSFETs

Device scaling limits of Si MOSFETs and their application dependencies

D.J. Frank, R.H. Dennard, E. Nowak et al. · Proceedings of the IEEE · 2001 · 1.6K citations

Engineering, Computer Engineering, Electrical Engineering +17

Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

Isabelle Ferain, Cynthia A. Colinge, Jean-Pierre Colinge · Nature · 2011 · 1K citations

Engineering, Electrical Engineering, Materials Science +13

Multiple-gate SOI MOSFETs

Jean-Pierre Colinge · Solid-State Electronics · 2004 · 936 citations

Short-channel effect in fully depleted SOI MOSFETs

K.K. Young · IEEE Transactions on Electron Devices · 1989 · 908 citations

Engineering, Electrical Engineering, Microelectronics +16

Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors

H.C. Pao, C. T. Sah · Solid-State Electronics · 1966 · 611 citations

Engineering, Electrical Engineering, Materials Science +12