Applied Surface Science · 2016 · 19 citations · 28 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor Thin FilmsThin Film Electrical PropertiesWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsConductivity In Thin FilmsElectrical PropertiesElectrical Properties AnalysisGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Crystal GrowthNitride Thin Films
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Scattering of electrons at threading dislocations in GaN
Nils Weimann, L.F. Eastman, D. Doppalapudi et al. · Journal of Applied Physics · 1998 · 615 citations
Activation energies of Si donors in GaN
Werner Götz, N. M. Johnson, C. Chen et al. · Applied Physics Letters · 1996 · 482 citations