Publication | Closed Access

Dramatic reduction of dislocations on a GaN point seed crystal by coalescence of bunched steps during Na-flux growth

Materials ScienceEngineeringDislocation InteractionPhysicsCrystal Growth TechnologyApplied PhysicsAluminum Gallium NitrideDramatic ReductionGan Power DeviceNa-flux GrowthBunched StepsCategoryiii-v SemiconductorMicrostructure