Diffusion Engineering by Carbon in Silicon

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

P.A. Stolk, H.‐J. Gossmann, D. J. Eaglesham et al. · Journal of Applied Physics · 1997 · 619 citations

Engineering, Materials Engineering, Materials Science +17

Mechanism of Diffusion of Copper in Germanium

F. C. Frank, David Turnbull · Physical Review · 1956 · 579 citations

Natural Sciences, Materials Science, Physics +17

Handbook on semiconductors

Dragan Panti · Microelectronics Journal · 1998 · 554 citations

Point defects, diffusion processes, and swirl defect formation in silicon

T. Y. Tan, U. G�sele · Applied Physics A · 1985 · 452 citations

Natural Sciences, Materials Engineering, Materials Science +16

Mechanism and kinetics of the diffusion of gold in silicon

U. Gösele, W. Frank, A. Seeger · Applied Physics A · 1980 · 361 citations

Natural Sciences, Materials Science, Physics +10