R. Scholz - Concepedia

Author

R. Scholz

Max Planck Institute of Microstructure Physics

Also Known As

R Scholz, R. F. Scholz, R. SCHOLZ, R. Scholz, R.F Scholz, R.F. Scholz, Rene F. Scholz, Rene Scholz, René Scholz

114

Publications

2.9K

Citations

H-Index

Concepts

All Affiliations

Max Planck Institute of Microstructure Physics Leibniz Institute for High Performance Microelectronics Institut für Solartechnologien (Germany)Fraunhofer Institute for Reliability and Microintegration Duke University

About

R. Scholz is an author at Max Planck Institute of Microstructure Physics specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	25	45	2.7K
2	Applied Physics	18	28	2.1K
3	Natural Sciences	5	5	155
4	Chemistry	2	2	952
5	Chemical Engineering	1	1	14

R. Scholz

Publications

2.7K

Citations

H-Index

Page 1

	Year	Citations
Size-controlled highly luminescent silicon nanocrystals: A SiO/SiO2 superlattice approach Margit Zacharias, J. Heitmann, R. Scholz, Applied Physics Letters Materials ScienceLuminescence IntensityEngineeringNanomaterialsNanotechnology	2002	779
Enhanced surface-excitonic emission in ZnO/Al<sub>2</sub>O<sub>3</sub> core–shell nanowires J.‐P. Richters, T. Voss, D S Kim, Nanotechnology Materials SciencePhotoluminescence EmissionPhotoluminescenceEngineeringSurface-excitonic Emission	2008	173
Si rings, Si clusters, and Si nanocrystals—different states of ultrathin SiOx layers Lixin Yi, J. Heitmann, R. Scholz, Applied Physics Letters Optical MaterialsEngineeringAmorphous Sio/sio2 SuperlatticesOptoelectronic DevicesUltrathin Siox Layers	2002	171
Multilevel charge storage in silicon nanocrystal multilayers Tiezheng Lu, Marin Alexe, R. Scholz, Applied Physics Letters Non-volatile MemoryEngineeringNanodevicesEmerging Memory TechnologyNanocomputing	2005	143
Novel collector design for high-speed SiGe:C HBTs B. Heinemann, H. Rücker, R. Barth, Electrical EngineeringEngineeringVlsi DesignHigh-frequency SigeHigh-frequency Device	2003	107
Analysis of Silicon Nanowires Grown by Combining SiO Evaporation with the VLS Mechanism Florian Kolb, H. Hofmeister, R. Scholz, Journal of The Electrochemical Society Silicon NanowiresEngineeringNanoporous MaterialSilicon On InsulatorSemiconductor Nanostructures	2004	100
Carbon-induced undersaturation of silicon self-interstitials R. Scholz, U. Gösele, Joo‐Youl Huh, Applied Physics Letters Materials ScienceSolid SolubilityEngineeringPhysicsNonequilibrium Point Defects	1998	94
Optical gain in monodispersed silicon nanocrystals M. Cazzanelli, Daniel Navarro‐Urrios, Francesco Riboli, Journal of Applied Physics Optical MaterialsEngineeringSilicon On InsulatorSmall Size DispersionOptical Amplifier	2004	84
Digital simulation of nonlinear circuits by wave digital filter principles Klaus Meerkötter, R. Scholz Wave Digital ModelElectrical EngineeringEngineeringAnalog System EngineeringNonlinear Circuit	2003	78
The contribution of vacancies to carbon out-diffusion in silicon R. Scholz, P. Werner, U. Gösele, Applied Physics Letters Materials SciencePoint DefectsBoron ProfilesCrystalline DefectsPhysics	1999	72

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