Challenges in SiC power MOSFET design

Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon

D. J. DiMaria, E. Cartier, D. Arnold · Journal of Applied Physics · 1993 · 716 citations

Engineering, Materials Engineering, Materials Science +17

Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors

Anant Agarwal, S. R. Seshadri, L.B. Rowland · IEEE Electron Device Letters · 1997 · 193 citations

Engineering, Electrical Engineering, Materials Science +17

Effect of process variations and ambient temperature on electron mobility at the SiO/sub 2//4H-SiC interface

Chao‐Yang Lu, James A. Cooper, Takashi Tsuji et al. · IEEE Transactions on Electron Devices · 2003 · 150 citations

Engineering, Electrical Engineering, Materials Science +17

Effect of interface states on electron transport in 4H-SiC inversion layers

E. Arnold, D. Alok · IEEE Transactions on Electron Devices · 2001 · 120 citations

Engineering, Electrical Engineering, Physics +17

Reliability of SiC MOS devices

Ranbir Singh, Allen R. Hefner · Solid-State Electronics · 2004 · 113 citations

Engineering, Electrical Engineering, Materials Science +12