IEEE Transactions on Electron Devices · 1993 · 21 citations · 12 references
EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsSemiconductor DevicesCurrent-voltage CharacteristicsDevice ModelingDevice SimulationElectronic Transport ModelingField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsBuried Channel DevicesCurrentsDrain-induced Barrier LoweringField-effect Transistor SimulationSubthreshold ConductionThreshold VoltageThreshold Voltage ExtractionThreshold Voltage Modeling
In the literature, it is unclear whether or not buried-channel (BC) MOSFETs are less resistant to drain-induced barrier lowering than surface-channel MOSFETs. The authors clarify this confusion and experimentally demonstrate the relationship between the threshold voltage and channel length reduction for normally-on (inverting) BC-MOSFETs. The results are compared with similar measurements on surface-channel MOSFETs. It is shown that BC-MOSFETs are more prone to drain-induced barrier lowering than surface-channel MOSFETs. A simple analytic model is derived for the subthreshold current in small-geometry BC-MOSFETs. The model shows good agreement with experimental measurements and with subthreshold currents obtained using a two-dimensional numerical simulator.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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A normally-off type buried channel MOSFET for VLSI circuits
K. Nishiuchi, H. Oka, T. Nakamura et al. · 1978 · 46 citations