IEEE Electron Device Letters · 2004 · 217 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationFerroelectric MaterialsMemory DevicesMetal-oxide-semiconductor Field-effect TransistorsOxide SemiconductorsSemiconductor Device MaterialsCurrentsData RetentionElectrical PropertiesElectrical Properties AnalysisFerroelectric Field-effect TransistorsLaser AblationLong-term Data RetentionRetention Characteristics
A ferroelectric memory FET with a Pt‑SrBi₂Ta₂O₉‑HfAlO₆Si gate stack was fabricated by laser ablation and its drain currents were measured over time after ±6 V poling. The device exhibited excellent data retention, maintaining a current ratio above 10⁶ after 12 days and after 10¹² ±8 V pulse cycles.
A ferroelectric memory field-effect transistor (FET) with a Pt-SrBi/sub 2/Ta/sub 2/O/sub 9/-Hf-Al-O-Si gate stack was fabricated and its electrical properties were characterized. The insulating and ferroelectric layers were successively deposited by a laser ablation technique. Excellent data retention characteristics were obtained. The drain currents of on- and off-states were measured as a function of time, after /spl plusmn/6 V poling voltage applied to the gate electrode. The current ratio of the on- and off-states was more than 10/sup 6/ even after 12 days. Moreover, after 10/sup 12/ cycles of /spl plusmn/8 V pulses, this ratio was also more than 10/sup 6/.
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The impact of gate-induced drain leakage current on MOSFET scaling