IEEE Transactions on Microwave Theory and Techniques · 1992 · 24 citations · 29 references
Device ModelingSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineeringRf SemiconductorHemt Structure S-parametersElectronic EngineeringBias Temperature InstabilityApplied PhysicsGate BiasHemt Wafer StructureCircuit SimulationComputational ElectromagneticsIntegrated CircuitsMicroelectronicsHemt Structures
A physically based technique for modeling HEMT structure S-parameters is presented. The core of the model is directly dependent on the HEMT wafer structure and the physical gate length. The model accurately predicts the device's S-parameters as a function of the applied gate bias. The physical basis facilitates the modeling of different types of HEMT structures. Measured S-parameters and simulation results over a frequency range of 1 to 25 GHz are presented for three different HEMT structures: uniformly doped, GaAs channel; pulse-doped, GaAs channel; and uniformly doped, strained InGaAs channel.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
29
GaAs FET device and circuit simulation in SPICE
H. Statz, P. G. Newman, I. W. Smith et al. · IEEE Transactions on Electron Devices · 1987 · 516 citations
Device Modeling, Electrical Engineering, Semiconductor Device +8