Simon J. Mahon

Impact of Bias and Device Structure on Gate Junction Temperature in AlGaN/GaN-on-Si HEMTs

Bryan K. Schwitter, Anthony E. Parker, Simon J. Mahon et al. · IEEE Transactions on Electron Devices · 2014 · 36 citations

Wide-bandgap Semiconductor, Engineering, Algan/gan-on-si Hemts +16

LNA Design Based on an Extracted Single Gate Finger Model

Simon J. Mahon, A. Dadello, Peter Vun et al. · 2010 · 34 citations

Engineering, Semiconductor Device, Quantum Engineering +16

Broadband integrated millimeter-wave up- and down-converter GaAs MMICs

Simon J. Mahon, Emmanuelle R. O. Convert, P.T. Beasly et al. · IEEE Transactions on Microwave Theory and Techniques · 2006 · 31 citations

Electrical Engineering, Millimeter Wave Technology, Engineering +11

Study of Gate Junction Temperature in GaAs pHEMTs Using Gate Metal Resistance Thermometry

Bryan K. Schwitter, Anthony E. Parker, Anthony P. Fattorini et al. · IEEE Transactions on Electron Devices · 2013 · 28 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +15

A technique for modelling S-parameters for HEMT structures as a function of gate bias

Simon J. Mahon, D.J. Skellern, F. Green · IEEE Transactions on Microwave Theory and Techniques · 1992 · 24 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +14