Anthony P. Fattorini

Impact of Bias and Device Structure on Gate Junction Temperature in AlGaN/GaN-on-Si HEMTs

Bryan K. Schwitter, Anthony E. Parker, Simon J. Mahon et al. · IEEE Transactions on Electron Devices · 2014 · 36 citations

Wide-bandgap Semiconductor, Engineering, Algan/gan-on-si Hemts +16

Broadband integrated millimeter-wave up- and down-converter GaAs MMICs

Simon J. Mahon, Emmanuelle R. O. Convert, P.T. Beasly et al. · IEEE Transactions on Microwave Theory and Techniques · 2006 · 31 citations

Electrical Engineering, Millimeter Wave Technology, Engineering +11

Study of Gate Junction Temperature in GaAs pHEMTs Using Gate Metal Resistance Thermometry

Bryan K. Schwitter, Anthony E. Parker, Anthony P. Fattorini et al. · IEEE Transactions on Electron Devices · 2013 · 28 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +15

Measurement and Modeling of Thermal Behavior in InGaP/GaAs HBTs

Oya Sevimli, Anthony E. Parker, Anthony P. Fattorini et al. · IEEE Transactions on Electron Devices · 2013 · 21 citations

Engineering, Thermal-impedance Model, Semiconductor Device +16

35 dBm, 35 GHz power amplifier MMICs using 6-inch GaAs pHEMT commercial technology

Simon J. Mahon, A. Dadello, Anthony P. Fattorini et al. · 2008 · 13 citations