IEEE Electron Device Letters · 1996 · 93 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesIii-v SemiconductorsMicrowave Semiconductor DevicesSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsChannel EngineeringElectrical Transport PropertiesElectron Impact IonizationGallium Arsenide Field-effect TransistorsGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Microwave Integrated CircuitsHigh-frequency Electronics
We report on fabrication and performance of novel 0.13 μm T-gate metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with composite InGaAs channels, combining the superior transport properties of In/sub 0.52/Ga/sub 0.48/As with low-impact ionization in the In/sub 0.32/Ga/sub 0.68/As subchannel. These devices exhibit excellent DC characteristics, high drain currents of 750 mA/mm, extrinsic transconductances of 600 mS/mm, combined with still very low output conductance values of 20 mS/mm, and high channel and gate breakdown voltages. The use of a composite InGaAs channels leads to excellent cut-off frequencies: f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> of 350 GHz and an f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> 160 GHz at V/sub DS/=1.5 V. These are the best microwave frequency results ever reported for any FET on GaAs substrate.
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W-band low-noise InAlAs/InGaAs lattice-matched HEMTs
P.C. Chao, A.J. Tessmer, K.H.G. Duh et al. · IEEE Electron Device Letters · 1990 · 205 citations
Extremely high gain 0.15 μm gate-length InAlAs/InGaAs/InP HEMTs
P. Ho, Ming-Yih Kao, P.C. Chao et al. · Electronics Letters · 1991 · 103 citations
0.15 mu m gate-length double recess pseudomorphic HEMT with f/sub max/ of 350 GHz
L. F. Lester, P.M. Smith, P. Ho et al. · 2003 · 14 citations