M. Chertouk

Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with a novel composite channels design

M. Chertouk, D. Xu, S. Kraus et al. · IEEE Electron Device Letters · 1996 · 93 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Reliability of InAlAs/InGaAs HEMTs grown on GaAs substrate with metamorphic buffer

M. Dammann, M. Chertouk, W. Jantz et al. · Microelectronics Reliability · 2000 · 19 citations

Electrical Engineering, Engineering, Metamorphic Buffer +6

0.15 μm passivated InP-based HEMT MMIC technology with high thermal stability in hydrogen ambient

M. Chertouk, M. Dammann, K. Köhler et al. · IEEE Electron Device Letters · 2000 · 19 citations

Materials Engineering, Materials Science, Electrical Engineering +13

Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with composite channels and f/sub max/ of 350 GHz

M. Chertouk, Dong-Hui Xu, S. Kraus et al. · 2002 · 15 citations

Wide-bandgap Semiconductor, Composite Channels, Electrical Engineering +15

Origins and characterization of low-frequency noise in GaAs MESFET's grown on InP substrates

M. Chertouk, A. Chovet · IEEE Transactions on Electron Devices · 1996 · 10 citations

Electrical Engineering, Engineering, Inp Substrates +12