IEEE Transactions on Microwave Theory and Techniques · 1998 · 71 citations · 9 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesBipolar Junction TransistorsDevice CharacterizationHigh-frequency Semiconductor DevicesIntegrated Circuit DesignRadio-frequency Integrated CircuitsSemiconductor HeterostructuresBipolar Junction Transistor BiasingBipolar Junction Transistor ModelingBipolar Junction Transistor SimulationCompact Model Parameter ExtractionHeterojunction Bipolar TransistorsParameter ExtractionParasitic ExtractionS-parameter Characterization
A parameter-extraction approach for the heterojunction bipolar transistor (HBT), which combines the analytical approach and empirical optimization procedure, is developed. The extraction techniques for extrinsic base-collector capacitance and pad parasitics are also included in this approach. The cutoff operation of the HBT's is utilized to extract the values of the pad capacitances. An excellent fit between measured and simulated S-parameters in the frequency range of 50 MHz-36 GHz is obtained over a wide range of bias points.
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