IEEE Electron Device Letters · 1994 · 11 citations · 15 references
EngineeringElectrical EngineeringPhysicsMicroelectronicsSemiconductor DevicesSemiconductor MaterialsNanoelectronicsQuantum WellsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsCarrier Transport In Quantum WellsDouble Heterostructure DevicesHeterostructure DevicesHeterostructure Field-effect TransistorsQuantum Well HeterostructuresQuantum Well StructuresTransconductanceTransport In Quantum Wells
A novel field-effect transistor based on a pseudomorphic InAs quantum well in a doped InGaAs/InAlAs double heterostructure is reported. Low-field mobility, electron peak velocity, and transistor performance are studied as functions of InAs quantum well thickness, where the InAs layer is in the center of a 300-/spl Aring/ uniformly doped InGaAs/InAlAs quantum well lattice matched to InP. Electron transport-both at low and high fields-along with transistor transconductance are optimal for structures with a 30-/spl Aring/ InAs quantum well. Transistors based on the InAs quantum well structures with 0.5-μm gate lengths yielded room temperature extrinsic transconductances of 708 mS/mm, more than a 100% increase over those with no InAs.
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