Deep levels and a possible d-x-like center in molecular beam epitaxial inxal1−xas

Long-lifetime photoconductivity effect in <i>n</i>-type GaAlAs

R. J. Nelson · Applied Physics Letters · 1977 · 303 citations

Natural Sciences, Materials Science, Physics +17

A Simple Calculation of the DX Center Concentration Based on an L-Donor Model

Masami Tachikawa, M. Mizuta, Hiroshi Kukimoto et al. · Japanese Journal of Applied Physics · 1985 · 105 citations

Natural Sciences, Materials Engineering, Materials Science +14

Deep electron trapping center in Si-doped InGaAlP grown by molecular-beam epitaxy

S. Nojima, H. Tanaka, H. Asahi · Journal of Applied Physics · 1986 · 74 citations

Engineering, Materials Science, Physics +17

Deep levels in Ga1−<i>x</i>Al<i>x</i>As under pressure

Ashok K. Saxena · Applied Physics Letters · 1980 · 51 citations

Natural Sciences, Materials Science, Physics +14

Effect of traps on low-temperature high electron mobility transistor characteristics

R. Holmstrom, J. P. Salerno · IEEE Electron Device Letters · 1984 · 30 citations

Engineering, Electrical Engineering, Materials Science +17