Electronic and transport properties of AlInN/AlN/GaN high electron mobility transistors

GaN: Processing, defects, and devices

S. J. Pearton, J.C. Zolper, R. J. Shul et al. · Journal of Applied Physics · 1999 · 1.8K citations

Engineering, Materials Engineering, Materials Science +17

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

O. Ambacher, B. E. Foutz, J. Smart et al. · Journal of Applied Physics · 2000 · 1.7K citations

Engineering, Materials Science, Physics +17

High electron mobility transistor based on a GaN-Al<i>x</i>Ga1−<i>x</i>N heterojunction

M. Asif Khan, Amal R. Bhattarai, J. N. Kuznia et al. · Applied Physics Letters · 1993 · 874 citations

Engineering, Electrical Engineering, Materials Science +17

Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures

Vincenzo Fiorentini, Fabio Bernardini, O. Ambacher · Applied Physics Letters · 2002 · 840 citations

Natural Sciences, Materials Science, Physics +17

Power electronics on InAlN/(In)GaN: Prospect for a record performance

J. Kuzmı́k · IEEE Electron Device Letters · 2001 · 565 citations

Engineering, Electrical Engineering, Materials Science +17