Infrared to visible up-conversion study for erbium-doped zinc tellurite glasses

Nejeh Jaba, A. Kanoun, H. Mejri, +3

Journal of Physics Condensed Matter

Materials ScienceEr3+ Concentration RelativeGlass-ceramicOptical MaterialsEngineering +13

Stark effect studied in -doped GaAs structures

A. Ben Jazia, H. Mejri, H. Mâaref, +1

Semiconductor Science and Technology

SemiconductorsStark EffectElectrical EngineeringCategoryquantum ElectronicsEngineering +10

Modeling of polarization charge in N-face InGaN/GaN MQW solar cells

Rabeb Belghouthi, S. Taamalli, Fraj Echouchene, +2

Materials Science in Semiconductor Processing

Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsApplied Physics +6

Self-heating and trapping effects in AlGaN/GaN heterojunction field-effect transistors

Imen Saidi, M. Gassoumi, H. Mâaref, +2

Journal of Applied Physics

Materials EngineeringTrapping EffectsElectrical EngineeringWide-bandgap SemiconductorEngineering +10

Thermal effects in AlGaN/GaN/Si high electron mobility transistors

Imen Saidi, Y. Cordier, Magdalena Chmielowska, +2

Solid-State Electronics

Electrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideGan Power Device +2

Back doping design in delta-doped AlGaN/GaN heterostructure field-effect transistors

Imen Saidi, L. Bouzaı̈ene, Mohamed Hichem Gazzah, +2

Solid State Communications

Electrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideGan Power Device

Stark effect modeling in strained n-type Si/Si1−xGex resonant tunneling heterostructures

F. Ben Zid, A. Bhouri, H. Mejri, +5

Journal of Applied Physics

Stark EffectElectrical EngineeringEngineeringTunneling MicroscopyPhysics +11

Electronic band parameters for zinc-blende Al1$minus$xGaxN

A. Bhouri, F. Ben Zid, H. Mejri, +3

Journal of Physics Condensed Matter

Aluminium NitrideEngineeringOptoelectronic DevicesSemiconductorsGallium Fraction X +15

Electronic and transport properties of AlInN/AlN/GaN high electron mobility transistors

Imen Saidi, H. Mejri, M. Baïra, +1

Superlattices and Microstructures

Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringTransport Properties +3

Effects of Activator Ion Concentration on the Upconversion Processes in Er3+-Doped TeO2-ZnO Glass

A. Kanoun, Nejeh Jaba, H. Mejri, +2

physica status solidi (a)

EngineeringActivator Ion ConcentrationLuminescent GlassOptical GlassLaser Applications +19