Single-Event Upset (SEU) Results of Embedded Error Detect and Correct Enabled Block Random Access Memory (Block RAM) Within the Xilinx XQR5VFX130

Gregory R. Allen, Larry D. Edmonds, Chen Wei Tseng, G.M. Swift, C. Carmichael

IEEE Transactions on Nuclear Science · 2010 · 30 citations · 7 references

Concepts

Abstract

Recent heavy ion measurements of the single-event upset (SEU) cross section for 65 nm embedded block random access memory (Block RAM) are presented. Results of initial investigation into the on-chip Error Detection and Correction (EDAC) are also discussed.

References

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