Development of 3-D Silicon Module With TSV for System in Packaging

TLDR

Portable electronics require multifunctional modules that integrate digital, RF, and memory functions, and TSV technology enables high‑density, complex integration for system‑in‑package designs. The paper develops a two‑stack 3‑D silicon module incorporating TSV for system‑in‑package applications. The module is fabricated using a via‑first silicon carrier, with thermo‑mechanical analysis guiding optimized TSV interconnects, and multiple functional chips assembled by wirebond and flip‑chip interconnections. Reliability testing under temperature cycling from –40 °C to 125 °C and drop tests confirms the module’s robustness.

Abstract

Portable electronic products demand multifunctional module comprising of digital, radio frequency and memory functions. Through silicon via (TSV) technology provides a means of implementing complex, multifunctional integration with a higher packing density for a system in package. A 3-D silicon module with TSV has been developed in this paper. Thermo-mechanical analysis has been performed and TSV interconnect design is optimized. Multiple chips representing different functional circuits are assembled using wirebond and flip chip interconnection methods. Silicon carrier is fabricated using via-first approach, the barrier copper via is exposed by the backgrinding process. A two-stack silicon module is developed and module fabrication details are given in this paper. The module reliability has been evaluated under temperature cycling (-40/125°C ) and drop test.