Growth of AlN films on Si (100) and Si (111) substrates by reactive magnetron sputtering

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

Hiroshi Amano, Nobuhiko Sawaki, Isamu Akasaki et al. · Applied Physics Letters · 1986 · 2.2K citations

Engineering, Materials Engineering, Materials Science +17

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Isamu Akasaki, Hiroshi Amano, Yasuo Koide et al. · Journal of Crystal Growth · 1989 · 688 citations

Engineering, Materials Engineering, Materials Science +13

Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon

Ting Lei, M. Fanciulli, R. J. Molnar et al. · Applied Physics Letters · 1991 · 371 citations

Engineering, Materials Engineering, Materials Science +17

Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE

K. Hiramatsu, Shintaro Itoh, Hiroshi Amano et al. · Journal of Crystal Growth · 1991 · 296 citations

Engineering, Materials Engineering, Materials Science +12

Vibrational properties of AlN grown on (111)-oriented silicon

T. Prokofyeva, M. Seon, J. Vanbuskirk et al. · Physical review. B, Condensed matter · 2001 · 260 citations

Natural Sciences, Materials Science, Physics +14