Quantum short-channel compact modeling of drain-current in double-gate MOSFET

Abstract

A continuous compact model for the drain current, including short-channel effects and carrier quantization in double-gate MOSFET is developed. The model is particularly well-adapted to ultra-scaled devices, with short channel lengths and ultra-thin silicon films. An extensive comparison step with 2D quantum numerical results fully validates the model. Finally, the model is shown to reproduce with an excellent accuracy experimental drain current in double-gate devices.