J.L. Autran

Strained FDSOI CMOS technology scalability down to 2.5nm film thickness and 18nm gate length with a TiN/HfO<inf>2</inf> gate stack

V. Barral, T. Poiroux, F. Andrieu et al. · 2007 · 47 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Behavioral modeling of SRIM tables for numerical simulation

S. Martinie, T. Saad-Saoud, S. Moindjie et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2014 · 33 citations

Numerical Analysis, Simulation Methodology, Engineering +7

Investigation of 30 nm Gate-All-Around MOSFET Sensitivity to Heavy Ions: A 3-D Simulation Study

K. Castellani-Coulié, Daniela Munteanu, J.L. Autran et al. · IEEE Transactions on Nuclear Science · 2006 · 32 citations

Engineering, Heavy Ions Irradiation, Bipolar Amplification +16

Impact of Ballistic and Quasi-Ballistic Transport on Performances of Double-Gate MOSFET-Based Circuits

S. Martinie, G. Le Carval, Daniela Munteanu et al. · IEEE Transactions on Electron Devices · 2008 · 30 citations

Engineering, Vlsi Design, Semiconductor Device +16

Simulation analysis of the bipolar amplification induced by heavy-ion irradiation in double-gate MOSFETs

K. Castellani-Coulié, Daniela Munteanu, J.L. Autran et al. · IEEE Transactions on Nuclear Science · 2005 · 26 citations

Device Modeling, Electrical Engineering, Simulation Analysis +13