S. Martinie

Performance and design considerations for gate-all-around stacked-NanoWires FETs

Sylvain Barraud, V. Lapras, B. Prévitali et al. · 2017 · 152 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16

On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature

G. Ghibaudo, M. Aouad, M. Cassé et al. · Solid-State Electronics · 2020 · 69 citations · Full text

Engineering, Electrical Engineering, Electronic Materials +13

Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies—Part I: Interface Potentials Analytical Model

T. Poiroux, O. Rozeau, P. Scheer et al. · IEEE Transactions on Electron Devices · 2015 · 60 citations

Engineering, Electrical Engineering, Microelectronics +16

Reconfigurable field effect transistor for advanced CMOS: Advantages and limitations

Carlos Navarro, Sylvain Barraud, S. Martinie et al. · Solid-State Electronics · 2016 · 50 citations

Engineering, Computer Engineering, Electrical Engineering +14

Tunability of Parasitic Channel in Gate-All-Around Stacked Nanosheets

Sylvain Barraud, B. Prévitali, V. Lapras et al. · 2018 · 47 citations

Engineering, Electrical Engineering, Materials Science +17