IEEE Electron Device Letters · 1990 · 52 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsElectron Beam LithographyNanoelectronicsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsSemiconductor Thin FilmsCarrier Velocity OvershootHeterostructure TransistorsHigh-electron-mobility TransistorsMolecular Beam EpitaxyOvershootPopulation OvershootTransconductance
Ultra-submicrometer-gate AlGaAs/GaAs high-electron-mobility transistors (HEMTs) that have gate lengths ranging from 25 to 85 nm and were fabricated using electron-beam lithographic techniques on epitaxial wafers grown by molecular beam epitaxy are discussed. These devices show that velocity overshoot and short-gate geometry effects play an important role for the gate lengths less than 100 nm. The maximum intrinsic transconductance is 215 mS/mm, and the effective saturated electron velocity reaches 3*10/sup 7/ cm/s for a 30-nm HEMT.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
7
Model for modulation doped field effect transistor
T. J. Drummond, H. Morkoç̌, K. Lee et al. · IEEE Electron Device Letters · 1982 · 206 citations
0.1-&#181;m Gate-length pseudomorphic HEMT's
P.C. Chao, R. C. Tiberio, K.H.G. Duh et al. · IEEE Electron Device Letters · 1987 · 27 citations