From point defects to dislocation loops: A comprehensive modelling framework for self-interstitial defects in silicon

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

P.A. Stolk, H.‐J. Gossmann, D. J. Eaglesham et al. · Journal of Applied Physics · 1997 · 619 citations

Engineering, Materials Engineering, Materials Science +17

Implantation and transient B diffusion in Si: The source of the interstitials

D. J. Eaglesham, P.A. Stolk, H.-J. Gossmann et al. · Applied Physics Letters · 1994 · 541 citations

Engineering, Materials Engineering, Materials Science +17

Transient Phosphorus Diffusion Below the Amorphization Threshold

M.D. Giles · Journal of The Electrochemical Society · 1991 · 322 citations

Engineering, Materials Engineering, Materials Science +17

Energetics of Self-Interstitial Clusters in Si

N. E. B. Cowern, Giovanni Mannino, P.A. Stolk et al. · Physical Review Letters · 1999 · 313 citations

Natural Sciences, Materials Science, Physics +13

Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

M. Jaraı́z, George H. Gilmer, J. M. Poate et al. · Applied Physics Letters · 1996 · 177 citations

Engineering, Materials Engineering, Materials Science +17