Study of the two-dimensional–three-dimensional growth mode transition in metalorganic vapor phase epitaxy of GaInP/InP quantum-sized structures

W. Seifert, A. Petersson, P. Castrillo, +2

Applied Physics Letters

Materials ScienceSemiconductorsGa0.5in0.5p/inp Quantum-sized StructuresEngineeringCrystalline Defects +13

Excited states of individual quantum dots studied by photoluminescence spectroscopy

Dan Hessman, P. Castrillo, M.-E. Pistol, +2

Applied Physics Letters

Individual Quantum DotsPhotonicsExcited State PropertyLocalized Excited StateEngineering +13

Carbon in silicon: Modeling of diffusion and clustering mechanisms

R. Pinacho, P. Castrillo, M. Jaraı́z, +5

Journal of Applied Physics

EngineeringComputational ChemistryChemistryDefect ToleranceClustering Mechanisms +15

Random telegraph noise in photoluminescence from individual self-assembled quantum dots

Mats‐Erik Pistol, P. Castrillo, Dan Hessman, +2

Physical review. B, Condensed matter

PhotonicsStranski-krastanow TechniquePhotoluminescenceEngineeringPhysics +10

Molecular dynamics study of the configurational and energetic properties of the silicon self-interstitial

Luis A. Marqués, Lourdes Pelaz, P. Castrillo, +1

Physical Review B

EngineeringSilicon On InsulatorThermal EnergyMolecular DynamicsSilicene +21

Band filling at low optical power density in semiconductor dots

P. Castrillo, Dan Hessman, M.-E. Pistol, +3

Applied Physics Letters

Materials SciencePhotonicsSemiconductor DotsIi-vi SemiconductorEngineering +13

Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach

R. Pinacho, M. Jaraı́z, P. Castrillo, +3

Applied Physics Letters

EngineeringComputational ChemistryChemistrySilicon On InsulatorIon Implantation +20

Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon

Ignacio Martin‐Bragado, P. Castrillo, M. Jaraı́z, +3

Physical Review B

Local Fermi LevelEngineeringMaterial SimulationComputational ChemistryChemistry +19

Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation

P. Castrillo, R. Pinacho, M. Jaraı́z, +1

Journal of Applied Physics

EngineeringMaterial SimulationImplementation SchemeDefect ToleranceNative Defect Diffusion +17

Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population

K. R. C. Mok, M. Jaraı́z, Ignacio Martin‐Bragado, +5

Journal of Applied Physics

EngineeringSilicon On InsulatorDefect ToleranceAmorphous Pocket PopulationSemiconductors +18