IEEE Transactions on Dielectrics and Electrical Insulation · 2011 · 14 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsPower ElectronicsSemiconductor DevicesDevice CharacterizationDevice ReliabilitySemiconductor Device MaterialsSemiconductor ReliabilityThermal Properties Of SemiconductorsTransient AnalysisJunction TransientsPower ConvertersPower Electronic ConvertersRise TimeSilicon CarbideTransient Operating BehaviorTransient PerformanceTransient Performance Analysis
This research was completed to study the effects of extreme transient conditions on Silicon Carbide MOSFET devices. Two different transient conditions that are common in power converters were studied in this paper. The first is effects of voltage rise time, or dV/dt, on these devices. The second is the effects of current pulses with short pulse width and high peak currents. Both of these tests were conducted at temperatures of 150 °C to determine the performance of these devices in high stress environments. For both of these experiments, testing apparatus had to be designed and built to create these specific conditions.
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Silicon carbide high-power devices
C.E. Weitzel, John W. Palmour, C.H. Carter et al. · IEEE Transactions on Electron Devices · 1996 · 441 citations
SiC Power Devices for Microgrids
Qingchun Zhang, Robert Callanan, Mrinal K. Das et al. · IEEE Transactions on Power Electronics · 2010 · 175 citations