IEEE Transactions on Electron Devices · 1993 · 26 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesBipolar Junction TransistorsCarrier TransportComplementary Metal-oxide-semiconductor TechnologyField-effect TransistorsHigh-frequency Semiconductor DevicesMetal-oxide-semiconductor Field-effect TransistorsBipolar Junction Transistor SimulationCurrent Collector DesignExperimental Results InterpretationHeterojunction Bipolar TransistorsIonizationIonization ParameterLow-voltage Cmos DesignUltra-low-voltage Circuit Design
The values of BV/sub ceo/ are computed for transistors with highly doped collectors and with thin reach-through collectors, using various sets of ionization coefficients including new data. Computed values of BV/sub ceo/ are compared with experimental results. It is shown that transistors with thin reach-through collectors have higher current capability for any given BV/sub ceo/ compared to those with highly doped collectors. Tradeoffs in terms of BV/sub ceo/, maximum collector current and the maximum frequency of operation are studied for transistors with highly doped and thin reach-through collectors.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
G.L. Patton, J.H. Comfort, B.S. Meyerson et al. · IEEE Electron Device Letters · 1990 · 480 citations
Ionization Rates of Holes and Electrons in Silicon
C. A. Lee, R. A. Logan, R. L. Batdorf et al. · Physical Review · 1964 · 475 citations