IEEE Journal of Solid-State Circuits · 1981 · 24 citations · 7 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignCmos Circuit DesignEtching ProcessesIntegrated Circuit DesignIntegrated Circuit FabricationMask FabricationVery-large-scale Integration LayoutCmos Fabrication ProcessesCritical LevelsMask AlignmentMetallizationOptical LithographySilicon Wafer ProcessingStep-and-repeat LithographyVlsi Implementation
An overview is given of a silicon-gate NMOS fabrication process used to realize a 450000 transistor, 32-bit single-chip CPU that operates at a worst case 18 MHz clock frequency. The technology utilizes 1.5-/spl mu/m lines and 1.0-/spl mu/m spaces on all critical levels, and provides tungsten dual layer metallization. The device and interconnect structure for this 8-mask process is outlined as a sequence through the process flow. Linewidth and alignment statistics are given for the optical reduction-projection step-and-repeat lithography used in this technology.
7
Invited: Circuit scaling limits for ultra-large-scale integration
J.D. Meindl, K.N. Ratnakumar, L. Gerzberg et al. · 1981 · 21 citations
Engineering, Computer Engineering, Electrical Engineering +17