2009 · 23 citations · 4 references
EngineeringComputer EngineeringElectrical EngineeringCircuit TheoryLow-power DesignMicroelectronicsDevice ModelingDevice SimulationSolid-state Drive ArchitectureBoost ConvertersBuck-boost ConvertersCircuit SimulationMemory Device SimulationNand Flash MemoryRise TimeSolid-state Drive Performance
This paper investigates the effect of the TSV resistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TSV</sub> ) on the performance of boost converters for Solid State Drive (SSD) using circuit simulation. When R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TSV</sub> is 0 Omega, both the rising time (t <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rise</sub> ) from 0 V to 15 V and the energy during boosting (E <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">loss</sub> ) of the output voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OUT</sub> ) are 10.6% and 6.6% of the conventional charge pump respectively. In contrast, when R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TSV</sub> is 200 Omega, for example, t <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rise</sub> is 30.1% and E <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">loss</sub> is 22.8% of the conventional charge pump. Besides, V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OUT</sub> cannot be boosted above 20 V when R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TSV</sub> is larger than 210 Omega. Therefore, in order to maintain the advantages of the boost converter over the charge pump in terms of t <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rise</sub> and E <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">loss</sub> , the reduction of R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TSV</sub> is very important.
4
Enabling technologies for 3D chip stacking
Patrick Leduc, L. Di Cioccio, Barbara Charlet et al. · 2008 · 48 citations