Tadashi Yasufuku

A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology

Maejima Hiroshi, K. Kanda, Susumu Fujimura et al. · 2018 · 78 citations

Engineering, Computer Engineering, Computer Science +13

A 1.8V 30nJ adaptive program-voltage (20V) generator for 3D-integrated NAND flash SSD

Koichi Ishida, Tadashi Yasufuku, Shingo Miyamoto et al. · 2009 · 50 citations

Engineering, Computer Engineering, Computer Science +17

13% Power reduction in 16b integer unit in 40nm CMOS by adaptive power supply voltage control with parity-based error prediction and detection (PEPD) and fully integrated digital LDO

Koji Hirairi, Yasuyuki Okuma, Hiroshi Fuketa et al. · 2012 · 45 citations

Engineering, Computer Engineering, Electrical Engineering +17

1.8 V Low-Transient-Energy Adaptive Program-Voltage Generator Based on Boost Converter for 3D-Integrated NAND Flash SSD

Koichi Ishida, Tadashi Yasufuku, Shinji Miyamoto et al. · IEEE Journal of Solid-State Circuits · 2011 · 35 citations

Engineering, Computer Engineering, Electrical Engineering +17

Device-circuit interactions in extremely low voltage CMOS designs (invited)

Hiroshi Fuketa, Tadashi Yasufuku, Satoshi Iida et al. · 2011 · 35 citations

Engineering, Computer Engineering, Electrical Engineering +17