Device-circuit interactions in extremely low voltage CMOS designs (invited)

Hiroshi Fuketa, Tadashi Yasufuku, Satoshi Iida, Makoto Takamiya, Masahiro Nomura, Hirofumi Shinohara, Takayasu Sakurai

2011 · 35 citations · 5 references

Concepts

Abstract

In this paper, energy and minimum operating voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DDmin</sub> ) are investigated for extremely-low-voltage CMOS logic designs. The dependences of energy and V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DDmin</sub> on device parameters, such as threshold voltage, subthreshold swing parameter, and DIBL coefficient, are examined based on simulations and measurements.

References

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