Comparative study of GaN/AlGaN MQWs grown homoepitaxially on and (0001) GaN

Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

Patrick Waltereit, O. Brandt, A. Trampert et al. · Nature · 2000 · 1.7K citations

Engineering, Materials Engineering, Materials Science +15

Molecular-beam epitaxy of GaN/AlxGa1−xN multiple quantum wells on <i>R</i>-plane (1012) sapphire substrates

H. M. Ng · Applied Physics Letters · 2002 · 252 citations

Engineering, Materials Engineering, Materials Science +17

Growth of M-plane GaN(100) on γ-LiAlO

Patrick Waltereit, O. Brandt, M. Ramsteiner et al. · Journal of Crystal Growth · 2000 · 131 citations

Engineering, Materials Engineering, Materials Science +12

In-plane polarization anisotropy of the spontaneous emission of <i>M</i>-plane GaN/(Al,Ga)N quantum wells

B. Rau, Patrick Waltereit, O. Brandt et al. · Applied Physics Letters · 2000 · 90 citations

Engineering, Materials Science, Physics +17

GaN homoepitaxy on freestanding (1100) oriented GaN substrates

C. Q. Chen, Mikhail Gaevski, Wenhong Sun et al. · Applied Physics Letters · 2002 · 74 citations

Engineering, Materials Engineering, Materials Science +17