C. Q. Chen

Luminescence from stacking faults in gallium nitride

R. Liu, A. Bell, F. A. Ponce et al. · Applied Physics Letters · 2005 · 330 citations

Optical Materials, Engineering, Photoluminescence +15

AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN

X. Hu, J. Deng, Nezih Pala et al. · Applied Physics Letters · 2003 · 92 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

GaN homoepitaxy on freestanding (1100) oriented GaN substrates

C. Q. Chen, Mikhail Gaevski, Wenhong Sun et al. · Applied Physics Letters · 2002 · 74 citations

High-quality AlGaN layers over pulsed atomic-layer epitaxially grown AlN templates for deep ultraviolet light-emitting diodes

Jianping Zhang, H. M. Wang, Wenhong Sun et al. · Journal of Electronic Materials · 2003 · 71 citations

Aluminium Nitride, High-quality Algan, Electrical Engineering +5

Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN

R. S. Qhalid Fareed, V. Adivarahan, C. Q. Chen et al. · Applied Physics Letters · 2004 · 45 citations

Materials Engineering, Materials Science, Crack-free Al0.24ga0.76n +14