H. M. Wang

Reduction of threading dislocation densities in AlN∕sapphire epilayers driven by growth mode modification

Jie Bai, Michael Dudley, Wenhong Sun et al. · Applied Physics Letters · 2006 · 108 citations

Growth Mode Modification, Dipole Half Loop, Engineering +19

GaN homoepitaxy on freestanding (1100) oriented GaN substrates

C. Q. Chen, Mikhail Gaevski, Wenhong Sun et al. · Applied Physics Letters · 2002 · 74 citations

High-quality AlGaN layers over pulsed atomic-layer epitaxially grown AlN templates for deep ultraviolet light-emitting diodes

Jianping Zhang, H. M. Wang, Wenhong Sun et al. · Journal of Electronic Materials · 2003 · 71 citations

Aluminium Nitride, High-quality Algan, Electrical Engineering +5

Dual-band dynamic reconfigurable intelligent surface for signal enhancement in millimeter wave

Huiming Yao, XinRun Du, H. M. Wang et al. · Science China Technological Sciences · 2024 · 11 citations