R. S. Qhalid Fareed - Concepedia

Author

R. S. Qhalid Fareed

Also Known As

R. S. Q. Fareed, R. S. Qhalid Fareed, R.S Qhalid Fareed, R.S. Qhalid Fareed, R.S.Q Fareed, R.S.Q. Fareed, R.S.Qhalid Fareed

Publications

824

Citations

H-Index

Concepts

All Affiliations

University of South Carolina Sensor Electronic Technology (United States)Tokushima University Rensselaer Polytechnic Institute Vilnius University

About

R. S. Qhalid Fareed is an author at University of South Carolina specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	20	692
2	Applied Physics	16	19	667
3	Electrical Engineering	7	7	241
4	Natural Sciences	1	1	38
5	Chemistry	1	1	38

R. S. Qhalid Fareed

Publications

766

Citations

H-Index

Page 1

	Year	Citations
Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates Z. Chen, R. S. Qhalid Fareed, Mikhail Gaevski, Applied Physics Letters Materials ScienceMaterials EngineeringAluminium NitrideAluminum NitrideEngineering	2006	90
GaN homoepitaxy on freestanding (1100) oriented GaN substrates C. Q. Chen, Mikhail Gaevski, Wenhong Sun, Applied Physics Letters	2002	74
High quality InN/GaN heterostructures grown by migration enhanced metalorganic chemical vapor deposition R. S. Qhalid Fareed, Rahul Jain, R. Gaška, Applied Physics Letters Wide-bandgap SemiconductorMemocvd TechniqueEngineeringMbe GrowthOptoelectronic Devices	2004	62
V-shaped defects in InGaN/GaN multiquantum wells Sourindra Mahanty, M. Hao, T. Sugahara, Materials Letters EngineeringPhysicsApplied PhysicsAluminum Gallium NitrideGan Power Device	1999	55
Time-resolved experimental study of carrier lifetime in GaN epilayers J. Mickevičius, M. S. Shur, R. S. Qhalid Fareed, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorPhotoluminescenceEngineeringPhysics	2005	46
Vertically faceted lateral overgrowth of GaN on SiC with conducting buffer layers using pulsed metalorganic chemical vapor deposition R. S. Qhalid Fareed, Jun Yang, Jianping Zhang, Applied Physics Letters Wide-bandgap SemiconductorEngineeringBuffer LayersSemiconductorsConstant Gallium Flux	2000	46
Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN R. S. Qhalid Fareed, V. Adivarahan, C. Q. Chen, Applied Physics Letters Materials EngineeringMaterials ScienceCrack-free Al0.24ga0.76nWide-bandgap SemiconductorEngineering	2004	45
AlGaN layers grown on GaN using strain-relief interlayers C. Q. Chen, Jianping Zhang, Mikhail Gaevski, Applied Physics Letters Materials ScienceMaterials EngineeringWide-bandgap SemiconductorEngineeringCrystalline Defects	2002	45
Characterization of Mg-doped GaN grown by metalorganic chemical vapor deposition M. Lachab, Doo‐Hyeb Youn, R. S. Qhalid Fareed, Solid-State Electronics Materials ScienceWide-bandgap SemiconductorEngineeringApplied PhysicsMg-doped Gan	2000	43
Metalorganic chemical vapor deposition selective growth and characterization of InGaN quantum dots J. Wang, M Nozaki, M. Lachab, Applied Physics Letters EngineeringChemistryChemical DepositionSemiconductor NanostructuresIi-vi Semiconductor	1999	38

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