R. S. Qhalid Fareed

Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates

Z. Chen, R. S. Qhalid Fareed, Mikhail Gaevski et al. · Applied Physics Letters · 2006 · 90 citations

Materials Science, Materials Engineering, Aluminium Nitride +12

GaN homoepitaxy on freestanding (1100) oriented GaN substrates

C. Q. Chen, Mikhail Gaevski, Wenhong Sun et al. · Applied Physics Letters · 2002 · 74 citations

High quality InN/GaN heterostructures grown by migration enhanced metalorganic chemical vapor deposition

R. S. Qhalid Fareed, Rahul Jain, R. Gaška et al. · Applied Physics Letters · 2004 · 62 citations

Wide-bandgap Semiconductor, Memocvd Technique, Engineering +19

V-shaped defects in InGaN/GaN multiquantum wells

Sourindra Mahanty, M. Hao, T. Sugahara et al. · Materials Letters · 1999 · 55 citations

Engineering, Physics, Applied Physics +5

Time-resolved experimental study of carrier lifetime in GaN epilayers

J. Mickevičius, M. S. Shur, R. S. Qhalid Fareed et al. · Applied Physics Letters · 2005 · 46 citations

Semiconductors, Wide-bandgap Semiconductor, Photoluminescence +13