J. Cabalu

Efficient p-type doping of GaN films by plasma-assisted molecular beam epitaxy

Anirban Bhattacharyya, Wen Li, J. Cabalu et al. · Applied Physics Letters · 2004 · 54 citations

Engineering, Materials Engineering, Materials Science +17

High reflectivity and crack-free AlGaN/AlN ultraviolet distributed Bragg reflectors

Anirban Bhattacharyya, Sandeep Iyer, E. Iliopoulos et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2002 · 40 citations

Natural Sciences, Materials Engineering, Materials Science +13

Comparative study of GaN/AlGaN MQWs grown homoepitaxially on and (0001) GaN

Anirban Bhattacharyya, I. Friel, Swaminathan P. Iyer et al. · Journal of Crystal Growth · 2003 · 28 citations

Engineering, Materials Engineering, Materials Science +12

Enhanced internal quantum efficiency and light extraction efficiency from textured GaN∕AlGaN quantum wells grown by molecular beam epitaxy

J. Cabalu, Christos Thomidis, T. D. Moustakas et al. · Journal of Applied Physics · 2006 · 23 citations · Full text

Engineering, Materials Engineering, Materials Science +17

High power ultraviolet light emitting diodes based on GaN∕AlGaN quantum wells produced by molecular beam epitaxy

J. Cabalu, Anirban Bhattacharyya, Christos Thomidis et al. · Journal of Applied Physics · 2006 · 22 citations

Engineering, Materials Engineering, Materials Science +17