Applied Physics Letters · 2000 · 90 citations · 8 references
EngineeringMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsIii-v SemiconductorsOptical Properties Of SemiconductorsQuantum WellsSemiconductor Crystal GrowthSemiconductor HeterostructuresSemiconductor PhysicsAnisotropyExcitonsMolecular Beam EpitaxyPolarizationPolarization AnisotropyPolarization DegreeSpontaneous EmissionValence Band
We study the in-plane polarization of wurtzite GaN/(Al, Ga)N multiple quantum wells. Identical M-plane (11̄00) and C-plane (0001) structures are grown by plasma-assisted molecular-beam epitaxy on γ-LiAlO2(100) and 6H–SiC(0001), respectively. While the emission from the conventional [0001] oriented wells is isotropic within the growth plane, we observe a strong polarization anisotropy of over 90% for the M-plane sample. The luminescence is polarized normal to [0001] and shows no spectral shift with polarization angle, i.e., it originates solely from A excitons (px and py valence band states). The deviation of the polarization degree from unity is attributed to the mixing with pz valence band states due to quantum confinement.
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Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers
R. Dingle, D. D. Sell, S. E. Stokowski et al. · Physical review. B, Solid state · 1971 · 526 citations
Giant electric fields in unstrained GaN single quantum wells
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