Growth of M-plane GaN(100) on γ-LiAlO

The crystal structure and anomalous dispersion of γ-LiAlO₂

M. Marezio · Acta Crystallographica · 1965 · 232 citations

Natural Sciences, Chemistry, Physics +11

Bulk and homoepitaxial GaN-growth and characterisation

S. Porowski · Journal of Crystal Growth · 1998 · 128 citations

Natural Sciences, Materials Science, Physics +12

Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H–SiC(0001)

Patrick Waltereit, O. Brandt, A. Trampert et al. · Applied Physics Letters · 1999 · 116 citations

Engineering, Materials Engineering, Materials Science +17

<i>In</i> <i>situ</i> scanning tunneling microscopy observation of surface morphology of GaAs(001) grown by molecular beam epitaxy

Edwin J. Heller, M. G. Lagally · Applied Physics Letters · 1992 · 115 citations

Natural Sciences, Materials Engineering, Materials Science +17

Gas Source Molecular Beam Epitaxy Growth of GaN on C-, A-, R- and M-Plane Sapphire and Silica Glass Substrates

Kakuya Iwata, Hajime Asahi Asami, R. Kuroiwa et al. · Japanese Journal of Applied Physics · 1997 · 75 citations

Engineering, Materials Engineering, Materials Science +17