Bulk and homoepitaxial GaN-growth and characterisation

Lattice parameters of gallium nitride

M. Leszczyński, H. Teisseyre, T. Suski et al. · Applied Physics Letters · 1996 · 418 citations

Natural Sciences, Materials Science, Physics +17

Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers

F. A. Ponce, D. P. Bour, W. T. Young et al. · Applied Physics Letters · 1996 · 231 citations

Natural Sciences, Materials Engineering, Materials Science +17

Investigation of longitudinal-optical phonon-plasmon coupled modes in highly conducting bulk GaN

P. Perlin, J. Camassel, W. Knap et al. · Applied Physics Letters · 1995 · 216 citations

Natural Sciences, Materials Science, Physics +13

Chemical polishing of bulk and epitaxial GaN

J.L. Weyher, S. Müller, I. Grzegory et al. · Journal of Crystal Growth · 1997 · 172 citations

Engineering, Materials Engineering, Materials Science +14

Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates

K. Pakuła, A. Wysmołek, K.P. Korona et al. · Solid State Communications · 1996 · 131 citations

Engineering, Materials Engineering, Materials Science +13