Concepedia

Homoepitaxy

Homoepitaxy is a semiconductor crystal growth technique in which a crystalline film is deposited on a substrate of the same material, ensuring lattice matching and minimizing interfacial defects.

212

Publications

9.4K

Citations

914

Authors

271

Institutions

Publications per year

2017–2026

30

Variants

Homoepitaxial Growth

Parents

Publications

212

Step-controlled epitaxial growth of SiC: High quality homoepitaxy

Hiroyuki Matsunami, Tsunenobu Kimoto · Materials Science and Engineering R Reports · 1997 · 609 citations

, , +14

Lattice match: An application to heteroepitaxy

A. Zur, T. C. McGill · Journal of Applied Physics · 1984 · 388 citations

, , +17

MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties

Zixuan Feng, A F M Anhar Uddin Bhuiyan, Md Rezaul Karim et al. · Applied Physics Letters · 2019 · 325 citations

, , +17

SiC materials-progress, status, and potential roadblocks

Adrian R. Powell, L.B. Rowland · Proceedings of the IEEE · 2002 · 231 citations

, , +17

Evolution of Mound Morphology in Reversible Homoepitaxy on Cu(100)

J.‐K. Zuo, J. F. Wendelken · Physical Review Letters · 1997 · 167 citations

, , +7

1–5 of 212

Authors

914

  1. JW
    James W. Evans

    Iowa State University, United States

    6 publications · 319 citations

    6

    h-index

  2. MC
    M. C. Bartelt

    Iowa State University, United States

    5 publications · 321 citations

    5

    h-index

  3. PA
    P. A. Thiel

    Iowa State University, United States

    5 publications · 167 citations

    5

    h-index

  4. PŠ
    Pavel Šmilauer

    Imperial College London, United Kingdom

    5 publications · 217 citations

    5

    h-index

  5. HO
    Hideyo Okushi

    National Institute of Advanced Industrial Science and Technology, Japan

    5 publications · 292 citations

    5

    h-index

1–5 of 914

Institutions

271

  1. Iowa State University

    Ames, United States

    11 h-index

    11 publications

    565 citations

  2. Ames National Laboratory

    Ames, United States

    9 h-index

    9 publications

    505 citations

  3. Forschungszentrum Jülich

    Jülich, Germany

    7 h-index

    7 publications

    330 citations

  4. FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic

    Prague, Czechia

    6 h-index

    6 publications

    232 citations

  5. Chinese Academy of Sciences

    Beijing, China

    6 h-index

    6 publications

    220 citations

  6. Oak Ridge National Laboratory

    Oak Ridge, United States

    6 h-index

    6 publications

    380 citations

  7. Tohoku University

    Sendai, Japan

    6 h-index

    6 publications

    271 citations

  8. Imperial College London

    London, United Kingdom

    6 h-index

    6 publications

    259 citations

1–8 of 271

Venues

  1. Applied Physics Letters

    29 publications · 1.9K citations

    22

    h-index

  2. Journal of Crystal Growth

    26 publications · 904 citations

    19

    h-index

  3. Diamond and Related Materials

    19 publications · 654 citations

    15

    h-index

  4. Surface Science

    16 publications · 612 citations

    13

    h-index

  5. Physical Review Letters

    PRL · 10 publications · 699 citations

    10

    h-index

1–5