IEEE Photonics Technology Letters · 2006 · 30 citations · 12 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLight-emitting DiodesOptical Properties Of SemiconductorsQuantum ConfinementQuantum WellsSemiconductor PhysicsWide-bandgap SemiconductorsCarrier ConfinementCarrier Confinement In Quantum WellsElectroluminescenceGallium Nitride (Gan) MaterialsGallium Nitride Light-emitting DiodesHigh-resolution X-ray DiffractionQuantum Well StructuresUltraviolet Light-emitting Diodes
To increase carrier confinement, the GaN barrier layer was substituted with an AlInGaN quaternary barrier layer which was lattice-matched to GaN in the GaN-InGaN multiple quantum wells (MQWs). Photoluminescence (PL) and high-resolution X-ray diffraction measurements showed that the AlInGaN barrier layer has a higher bandgap energy than the originally used GaN barrier layer. The PL intensity of the five periods of AlInGaN-InGaN MQWs was increased by three times compared to that of InGaN-GaN MQWs. The electroluminescence (EL) emission peak of AlInGaN-InGaN MQWs ultraviolet light-emitting diode (UV LED) was blue-shifted, compared to a GaN-InGaN MQWs UV LED and the integrated EL intensity of the AlInGaN-InGaN MQWs UV LED increased linearly up to 100 mA. These results indicated that the AlInGaN-InGaN MQWs UV LED has a stronger carrier confinement than a GaN-InGaN MQWs UV LED due to the larger barrier height of the AlInGaN barrier layer compared to a GaN barrier layer.
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Luminescences from localized states in InGaN epilayers
Shigefusa F. Chichibu, T. Azuhata, T. Sota et al. · Applied Physics Letters · 1997 · 405 citations
AlGaN Deep-Ultraviolet Light-Emitting Diodes
Jianping Zhang, X. Hu, A. V. Lunev et al. · Japanese Journal of Applied Physics · 2005 · 108 citations